The limits to ‘spin-off’: UK defence R & D and the development of gallium arsenide technology

British Journal for the History of Science 45 (1):97-121 (2012)
  Copy   BIBTEX

Abstract

UK defence R & D played a leading role in the development of gallium arsenide and other III–V semiconductor materials. Often touted as the semiconductor of the future because of its potential for high-speed computing, gallium arsenide had unique properties compared to silicon that made it attractive for military applications. Some consumer applications were also developed, and these eventually became significant with its use in mobile phone handsets in the mid-1990s. However, despite the apparent advantage of close links to the defence establishments and early access to expertise in III–V technologies, UK companies had limited success in these civil markets, preferring instead to focus on defence procurement

Links

PhilArchive



    Upload a copy of this work     Papers currently archived: 93,867

External links

Setup an account with your affiliations in order to access resources via your University's proxy server

Through your library

Similar books and articles

The nature of defects inn+ gallium arsenide.P. W. Hutchinson & P. S. Dobson - 1974 - Philosophical Magazine 30 (1):65-73.
Four-layer stacking faults in gallium arsenide.D. Laister & G. M. Jenkins - 1971 - Philosophical Magazine 24 (189):705-708.

Analytics

Added to PP
2015-01-22

Downloads
10 (#1,204,939)

6 months
2 (#1,445,852)

Historical graph of downloads
How can I increase my downloads?