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Nitrogen doping and multiplicity of stacking faults in SiC
Philosophical Magazine 86 (29-31):4685-4697 (2006)
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Citations of this work
Defects created in N-doped 4H-SiC in the brittle regime: Stacking fault multiplicity and dislocation cores.M. Lancin, M. Texier, G. Regula & B. Pichaud - 2009 - Philosophical Magazine 89 (15):1251-1266.
References found in this work
Investigations of dislocation strain fields using weak beams.D. J. H. Cockayne, I. L. F. Ray & M. J. Whelan - 1969 - Philosophical Magazine 20 (168):1265-1270.
LXVIII. Direct observations of the arrangement and motion of dislocations in aluminium.P. B. Hirsch, R. W. Horne & M. J. Whelan - 1956 - Philosophical Magazine 1 (7):677-684.
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