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Dissociation of near-screw dislocations in germanium and silicon
Philosophical Magazine 31 (1):105-113 (1975)
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Citations of this work
On the mobility of partial dislocations in silicon.K. Wessel & H. Alexander - 1977 - Philosophical Magazine 35 (6):1523-1536.
Constrictions in the stacking faults of dislocations in germanium.G. Packeiser & P. Haasen - 1977 - Philosophical Magazine 35 (3):821-827.
Alternate dissociation of the screw dislocations in a buried small-angle twist boundary in silicon.R. Bonnet, M. Loubradou, S. Youssef, J. -L. Rouvière & F. Fournel - 2009 - Philosophical Magazine 89 (5):413-434.
A dissociated dislocation in an ultrathin silicon plate.S. Youssef & R. Bonnet - 2006 - Philosophical Magazine 86 (20):3077-3088.
Strain relaxation in epitaxial GaAs/Si nanostructures.Roksolana Kozak, Ivan Prieto, Yadira Arroyo Rojas Dasilva, Rolf Erni, Oliver Skibitzki, Giovanni Capellini, Thomas Schroeder, Hans von Känel & Marta D. Rossell - 2017 - Philosophical Magazine 97 (31):2845-2857.
References found in this work
The observation of dissociated dislocations in silicon.I. L. F. Ray & D. J. H. Cockayne - 1970 - Philosophical Magazine 22 (178):853-856.
Extended dislocations in germanium.F. Häussermann & H. Schaumburg - 1973 - Philosophical Magazine 27 (3):745-751.
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