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  1. Electron microscope study of electrically active impurity precipitate defects in silicon.A. G. Cullis & L. E. Katz - 1974 - Philosophical Magazine 30 (6):1419-1443.
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  • Electron microscope observations of stacking faults and microtwins in synthetic diamond.G. S. Woods - 1971 - Philosophical Magazine 23 (182):473-484.
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  • The nature of precipitates in boron-doped TiC.John D. Vekables - 1967 - Philosophical Magazine 16 (143):873-890.
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  • The determination of the sign of the burgers vector of frank dislocation loops.W. J. Tunstall - 1969 - Philosophical Magazine 20 (166):701-705.
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  • Dislocation networks in phosphorus-implanted silicon.Masao Tamuka - 1977 - Philosophical Magazine 35 (3):663-691.
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  • Precipitation associated with the growth of stacking faults in copper–silver alloys.R. Räty & H. M. Miekk-Oja - 1968 - Philosophical Magazine 18 (156):1105-1125.
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  • Knitting of dislocation networks by means of stress-induced climb in an aluminium-magnesium alloy.V. K. Lindroos & H. M. Miekk-oja - 1968 - Philosophical Magazine 17 (145):119-133.
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  • Image contrast of triple loops in tellurium-doped gallium arsenide.D. Laistbr & G. M. Jenkins - 1969 - Philosophical Magazine 20 (164):361-372.
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  • Some electron diffraction contrast effects at planar defects in crystals.C. J. Humphreys, A. Howie & G. R. Booker - 1967 - Philosophical Magazine 15 (135):507-522.
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