Dislocation networks in phosphorus-implanted silicon

Philosophical Magazine 35 (3):663-691 (1977)
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10.1080/14786437708235998

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Oxidation, defects and vacancy diffusion in silicon.I. R. Sanders & P. S. Dobson - 1969 - Philosophical Magazine 20 (167):881-893.
Surface damage on abraded silicon specimens.R. Stickler & G. R. Booker - 1963 - Philosophical Magazine 8 (89):859-876.
Contrast from large prismatic dislocation loops.W. L. Bell & G. Thomas - 1966 - Philosophical Magazine 13 (122):395-420.

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