Abstract

We present the resistive switching characteristics of Metal-Insulator-Metal devices based on amorphous Al2O3which is deposited by Atomic Layer Deposition. A maximum processing temperature for this memory device is 300°C, making it ideal for Back-End-of-Line processing. Although some variations in the forming, set, and reset voltages are obtained for many of the measured MIM devices, thememristoreffect has been obtained after cyclicI-Vmeasurements. These resistive transitions in the metal oxide occur for bothbipolarandunipolarconditions, while theIOFF/IONratio is around 4–6 orders of magnitude and is formed at gate voltages ofVg<4 V. In unipolar mode, a gradual reduction inVSETis observed and is related to combined incomplete dissolution of conductive filaments which leaves some residuals and thickening of chemically reduced Al2O3during localized Joule heating. This is important because, by analyzing the macroscopic resistive switching behavior of this MIM structure, we could indirectly relate it to microscopic and/or nanoscopic phenomena responsible for the physical mechanism upon which most of these devices operate.